SCH2601 no.8329-1/7 features ? the SCH2601 incorporates two elements in the same package which are n-channel mosfets, thereby enabling high-density mounting. ? low on-resistance. ? high-speed switching. ? 2.5v drive. ? high resistance to damage from esd (typ 300v) [with a protection diode connected between the gate and source]. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 30 --30 v gate-to-source voltage (*1) v gss 10 --10 v drain current (dc) i d 0.7 --0.4 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 2.8 --1.6 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.65 w channel temperature tch 150 c storage temperature tstg --55 to +150 c ( * 1) : note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 m a gate-to-source leakage current i gss v gs =8v, v ds =0v 1 m a cutoff voltage v gs (off) v ds =10v, i d =100 m a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =350ma 0.48 0.8 s r ds (on)1 i d =350ma, v gs =4v 0.7 0.9 w static drain-to-source on-state resistance r ds (on)2 i d =200ma, v gs =2.5v 0.8 1.15 w r ds (on)3 i d =10ma, v gs =1.5v 1.6 2.4 w marking : fa continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8329 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 61005pe ms im tb-00000175 SCH2601 n-channel and p-channel silicon mosfets general-purpose switching device applications
SCH2601 no.8329-2/7 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =10v, f=1mhz 30 pf output capacitance coss v ds =10v, f=1mhz 7 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.5 pf turn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 6 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 8 ns total gate charge qg v ds =10v, v gs =4v, i d =700ma 1 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =700ma 0.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =700ma 0.2 nc diode forward voltage v sd i s =700ma, v gs =0v 0.93 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs =8v, v ds =0v --1 m a cutoff voltage v gs (off) v ds =--10v, i d =--100 m a --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--0.2a 0.25 0.42 s r ds (on)1 i d =--200ma, v gs =--4v 1.5 1.9 w static drain-to-source on-state resistance r ds (on)2 i d =--100ma, v gs =--2.5v 2.0 2.8 w r ds (on)3 i d =--10ma, v gs =--1.5v 4.0 8.0 w input capacitance ciss v ds =--10v, f=1mhz 40 pf output capacitance coss v ds =--10v, f=1mhz 8 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 4.5 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 5 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 5 ns total gate charge qg v ds =--10v, v gs =--4v, i d =--0.4a 0.83 nc gate-to-source charge qgs v ds =--10v, v gs =--4v, i d =--0.4a 0.25 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--4v, i d =--0.4a 0.17 nc diode forward voltage v sd i s =--0.4a, v gs =0v --1.0 --1.5 v package dimensions electrical connection unit : mm 7028-006 65 4 12 3 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 top view 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 1 3 2 64 5 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : sch6
SCH2601 no.8329-3/7 switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% 4v 0v v in v in p. g 50 w g s i d =350ma r l =42 w v dd =15v v out d SCH2601 pw=10 m s d.c. 1% 0v --4.5v v in v in p. g 50 w g s i d = --200ma r l =75 w v dd = --15v v out d SCH2601 [pch] [nch] [pch] [nch] [pch] [nch] i d -- v ds it07510 i d -- v gs it07511 0.1 0.5 0 0.2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 6.0v 4.0v 3.5v 3.0v 2.5v 2.0v v gs =1.5v 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds =10v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- v gs it09241 1.0 0 1.0 0 2.0 3.0 4.0 5.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ta=25 c i d =200ma 350ma gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- w i d -- v ds it07653 i d -- v gs it07654 --0.1 --0.5 0 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.25 --0.20 --0.15 --0.10 --0.05 --0.30 --6.0v --4.5v --4.0v --3.5v --3.0v --2.5v --2.0v v gs = -- 1.5v --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 --0.50 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds = --10v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- v gs it09247 -- 1 0 1.0 0 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 2.0 3.0 4.0 4.5 0.5 1.5 2.5 3.5 5.0 --10 ta=25 c --0.1a i d = --0.2a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- w
SCH2601 no.8329-4/7 2 0.1 23 1.0 5 7 2 10 3 5 7 3 sw time -- i d it07516 it07515 i s -- v sd it07514 0.01 0.1 0.1 23 57 23 57 1.0 7 5 3 3 2 2 7 5 1.0 ? y fs ? -- i d 0.8 1.0 0.6 1.2 1.4 0.4 0.2 0.01 1.0 0.1 7 5 3 2 7 5 3 3 2 2 v ds =10v 25 c ta= --25 c 75 c v gs =0 --25 c 25 c v dd =15v v gs =4v t d (off) t f t d (on) t r ta= 75 c drain current, i d -- a switching time, sw time -- ns forward transfer admittance, ? y fs ? -- s drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a r ds (on) -- ta it09242 --40 --60 --20 0 20 40 60 80 100 120 140 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d =200ma, v gs =2.5v i d =350ma, v gs =4.0v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- w --0.1 23 5 7 sw time -- i d it09250 it09249 i s -- v sd it07657 --0.001 0.1 0.01 --0.01 23 57 --0.1 22 357 357 --1.0 7 5 3 2 1.0 7 5 3 2 ? y fs ? -- i d --0.8 --1.0 --0.6 --1.2 --1.4 --0.4 --0.2 --0.001 --0.1 --0.01 7 5 3 2 7 5 3 2 --1.0 7 5 3 2 v ds = --10v ta= --25 c 75 c 25 c 10 7 5 3 2 3 2 v gs =0v 25 c --25 c ta= 75 c t d (off) t d (on) v ds = --15v v gs = --4v t r t f r ds (on) -- ta it09248 --40 --60 --20 0 20 40 60 80 100 120 140 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d = --0.1a, v gs = --2.5v i d = --0.2a, v gs = --4.0v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a switching time, sw time -- ns diode forward voltage, v sd -- v drain current, i d -- a forward transfer admittance, ? y fs ? -- s source current, i s -- a [pch] [nch] [pch] [nch] [pch] [nch] [pch] [nch]
SCH2601 no.8329-5/7 030 10 15 20 25 5 ciss, coss, crss -- v ds it09243 0 60 50 20 30 10 40 crss coss ciss f=1mhz 0 0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs -- qg it09244 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 it07519 v ds =10v i d =0.7a ta= 75 c 25 c -- 25 c v gs =4v drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w it07520 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 ta= 75 c -- 25 c 25 c v gs =2.5v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w 0 --30 --10 --15 --20 --25 -- 5 ciss, coss, crss -- v ds it08163 0 60 50 20 30 10 40 crss coss ciss 0 0 0.9 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 --4.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 v gs -- qg it09251 r ds (on) -- i d 23 57 23 57 --0.01 --0.1 --1.0 it08164 v ds = --10v i d = --0.4a v gs = --4v ta= 75 c 25 c -- 25 c 5 5 7 1.0 2 3 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- w r ds (on) -- i d 5 7 1.0 2 3 23 57 23 57 --0.01 --0.1 --1.0 it08165 v gs = --2.5v ta= 75 c -- 25 c 25 c drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w [pch] [nch] [pch] [nch] [pch] [nch] [pch] [nch]
SCH2601 no.8329-6/7 0 0 20 40 60 80 100 120 0.1 0.2 0.4 0.3 0.65 0.5 0.6 0.7 140 160 it09571 2 3 5 7 2 3 5 7 2 3 --1.0 --0.1 --0.01 --1.0 23 57 --0.1 23 57 --10 25 3 it09570 operation in this area is limited by r ds (on). 100ms 1ms 10ms dc operation i dp = --1.6a i d = --0.4a 2 3 5 7 2 3 5 7 2 5 3 1.0 0.1 0.01 1.0 23 57 0.1 23 57 10 25 3 it09569 operation in this area is limited by r ds (on). 100ms 1ms 10ms dc operation i dp =2.8a i d =0.7a p d -- ta a s o <10 m s drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 5 0.8mm) 1unit it07521 r ds (on) -- i d 5 7 2 3 1.0 5 7 23 57 23 0.01 0.1 v gs =1.5v ta= 75 c -- 25 c 25 c drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w a s o 10 m s r ds (on) -- i d 5 7 2 3 23 57 23 57 --0.01 --0.1 --1.0 it08166 v gs = --1.5v ta= 75 c -- 25 c 25 c drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit [pch] [nch] [pch] [nch] [nch, pch]
SCH2601 no.8329-7/7 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 2005. specifications and information herein are subject to change without notice. note on usage : since the SCH2601 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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